DESCRIPTION
RIE (Reactive Ion Etching) configured with several process gasses including SF6 (Sulfur Hexafluoride), CF4 (tetrafluorometane), O2 (Oxygen), and Ar (Argon). The system is indicated for dry etching of Si, SiO2, Si3N4, resist residual layer removing, Ar milling and surface activation by O2 plasma. The RIE has an Alluminum reaction chamber, suitable for long etching processes.
ACCESS
The use of the instrument require the presence of a trained operator. For prolonged access, training can be provided upon agreement.
LOCATION
CNR-IOM - Istituto Officina dei Materiali,
c/o Area Science Park - Basovizza
Strada Statale 14 km 163,5 - 34149 Trieste
Cleanroom 2
Contact person
Simone Dal Zilio
IOM-CNR | +39-0403756458
dalzilio@iom.cnr.it