DESCRIPTION

The Veeco Dimension 3100 atomic force microscope is an ambient AFM which utilizes standard and advanced SPM imaging modes for measuring properties of surfaces, nanomaterials, semiconductor/electronic devices, biomaterials, thin films... The sample stage will allow large sample sizes (up to a 6 inch wafer) with a scan size up to 90 µm in the X & Y and 6 µm in the Z direction.
Applications: Nanomaterials, Advanced materials, Electronic circuits, Thin films, MEMS/NEMS, Biotechnology.
Modes of operation: Contact mode, Tapping mode, Phase imaging, Lateral force mode,  Force imaging, Magnetic force microscopy, Electric force microscopy, Conductive AFM, Kelvin probe force microscopy.

http://www.nanocenter.si/index.php?page=atomic-force-microscope---afm

ACCESS

New users have to be supervised by an experienced user. Before reservation contact responsible person. Users are obliged to use reservation system.

Equipment is accessable 24/7.

LOCATION

Jozef Stefan Institute

Jamova 39, Ljubljana, Slovenia
room: Laboratory B

Contact person

Damjan Svetin

+386 1 477 3553

damjan.svetin@ijs.si

DESCRIPTION

DaLI is a desktop laser imaging system for mask-less photolithography and patterning. The system uses direct exposure with an UV diode laser beam (375 nm) to pattern materials sensitive to ultraviolet light. Standard i-line photoresists, such as SU-8, AZ, etc. can be used. Exchangeable exposure tool sizes (beam diameters) provide high precision details and speed (fine 0.8um, coarse 2.5um). The flexibility of this technology enables design changes and experimentation, which makes the DaLI perfect for R&D and prototyping. Conducting, isolating, semiconducting, transparent or opaque substrate can be used; max. lateral dimensions 100 mm x 100 mm, maximum thickness 10 mm.

DaLI is used in the field of micro-scale technology, microfluidics and optofluidics, nanotechnology, microelectronics, and enables microstructuring a variety of micro devices, such as integrated circuits, PCBs, MEMS, lab-on-a-chip, and other applications.

http://www.nanocenter.si/index.php?page=laser-lithography

ACCESS

Acces to the equipment is allowed to a trained user. Short trainings are provided by an experienced operators, upon agreement.

LOCATION

Jozef Stefan Institute

Jamova 39, Ljubljana, Slovenia
room: B106

Contact person

Damjan Svetin

+386 1 477 3553

damjan.svetin@ijs.si

DESCRIPTION

Optical ellipsometry is a non-destructive technique for investigation of surfaces, interfaces and thin films. It probes modifications of the polarization state of optical beam reflected from the sample. The system provides ellipsometric analysis with the lateral resolution of 1 μm. Optical illumination of the sample takes place via monochromatic radiation (spectrally filtered light from Xenon Arc lamp with the bandwidth of 6 - 12 nm) with tunable wavelength in the range from 365 nm (UV) to 1600 nm (NIR). Extension to the NIR region is a specialty of our system that makes it very suitable for investigations of semiconductor materials. Laser light source at λ = 658 nm can also be used for illumination and polarization analysis.

http://www.nanocenter.si/index.php?page=elipsometer-2

ACCESS

The use of the instrument require the presence of a trained operator. For prolonged access, training can be provided upon agreement.

LOCATION

Jozef Stefan Institute

Jamova 39, Ljubljana, Slovenia
room: Z1

Contact person

Luka Cmok

+386 1 476 3220

luka.cmok@ijs.si

DESCRIPTION

Dual Beam Helios Nanolab 650 G2 (Thermofisher Scientiffic, US) consist of ultra-high resolution Elstar SEM column with UC monochromator and Tomahawk focused ion beam (FIB) column. The configuration at Nanocenter include: in-column TLD detector, ETD detector, ICE detector, retractable CBS detector (BSE), retractable STEM (BF/DF/HAADF transmission imaging); plasma cleaner; charge compensator; Pt, C and SiOx gas injection system for material deposition; Autoprobe 200 micro-manipulator (Oxford, UK) and X-MAX 50 SDD EDX system (Oxford, UK).

E-Beam: 50V – 30 kV (1.6 pA – 100 nA), resolution: 0.8 nm @ 30 kV (STEM), 0.8 nm @ 15 kV, 0.8 nm @ 2 kV, 0.9 nm @ 1 kV, 1.5 nm @ 200 V.

I-Beam: 500V – 30 kV (4 pA – 65 nA); 4.5/2.5 nm @ 30 kV (PS/SE, method).

Instrument is used for cross-sectional analysis, nano-pattering, TEM sample preparation, 3D tomography and deposition of thin conductive or dielectric films via ion-beam induced deposition.

http://www.nanocenter.si/index.php?page=focused-ion-beam---fib

ACCESS

The use of the instrument require the presence of a trained operator. For prolonged access, training can be provided upon agreement.

LOCATION

Jozef Stefan Institute

Jamova 39, Ljubljana, Slovenia
room: Building B, basement

Contact person

Gregor Kapun

+386 1 477 3220

info@nanocenter.si